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Pérez Santos, María Susana González Sánchez, Tomás 2009-01-21 2009-10-15T08:53:56Z 2002 Pérez Santos, M.S. y González Sánchez, T.(2002) "Monte Carlo analysis of voltage noise in sub-micrometre semiconductor structures under large-signal regime". Semiconductor science and technollogy, 17, (696-700) http://hdl.handle.net/10366/55881 http://hdl.handle.net/10366/55881 Using an ensemble Monte Carlo technique, we investigate voltage noise(related to diffusion noise sources) in GaAs n+nn+ structures operating underlarge-amplitude periodic signals. A pronounced noise contribution aroundthe frequency of the excitation signal f0 is evidenced. This contribution is mainly associated with the time-varying field sustained by the n region. Its presence and importance depends on the length of the n region and the value of f0. This additional contribution in the voltage noise spectrum tends to disappear for values of f0 beyond the cut-off of the noise related to the n region. On the other hand, the level of low-frequency noise under large-signal conditions is higher than under mall-signal operation due to theincrease of the effective resistance of the structures. eng https://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Attribution-NonCommercial-NoDerivs 3.0 Unported Monte-Carlo, Método de Noise Large-signal Monte Carlo method Monte Carlo analysis of voltage noise in sub-micrometre semiconductor structures under large-signal regime info:eu-repo/semantics/article