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García Vasallo, Beatriz Wichmann, Nicolas Bollaert, Sylvain Roelens, Yannick Cappy, Alain González Sánchez, Tomás Pardo Collantes, Daniel Mateos López, Javier 2009-02-02 2009-10-15T08:54:19Z 2009-10-15T08:54:19Z 2007 García Vasallo, B., Wichmann, N., Bollaert, S., Roelens, Y., Cappy A., González Sánchez, T., Pardo Collantes, Daniel y Mateos López, Javier (2007). Comparison between the dynamic performance of double-and single-gate AlInAs/InGaAs HEMTs. "IEEE transactions on electron devices" 54 (11), 2815-2822 http://hdl.handle.net/10366/55887 Se han estudiado las características estáticas y dinámicas de HEMTs de doblre puerta (DG-HEMTs) por medio de simulaciones Monte Carlo, y se han comparado con las de los HEMTs de puerta única. Las simulaciones reproducen adecuadamente los resultados experimentales y permiten confirmar y explicar desde el punto de vista microscópico el origen de la reducción de los efectos de canal corto y el aumento de fmax que se observa en los transistores de doble puerta. The static and dynamic behavior of InAlAs/InGaAsdouble-gate high-electron mobility transistors (DG-HEMTs) isstudied by means of an ensemble 2-D Monte Carlo simulator.The model allows us to satisfactorily reproduce the experimentalperformance of this novel device and to go deeply into its physicalbehavior. A complete comparison between DG and similarstandard HEMTs has been performed, and devices with differentgate lengths have been analyzed in order to check the attenuationof short-channel effects expected in the DG-structures. Wehave confirmed that, for very small gate lengths, short-channeleffects are less significant in the DG-HEMTs, leading to a betterintrinsic dynamic performance. Moreover, the higher values ofthe transconductance over drain conductance ratio gm/gd and,especially, the lower gate resistance Rg also provide a significantimprovement of the extrinsic fmax. 8 p. application/pdf Inglés eng Institute of Electrical and Electronics Engineers (Nueva York, Estados Unidos) Attribution-NonCommercial-NoDerivs 3.0 Unported https://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Monte-Carlo, Método de Dispositivos electrónicos Double gate HEMTs High-frequency electronic devices Monte Carlo method Comparison between the dynamic performance of double-and single-gate AlInAs/InGaAs HEMTs info:eu-repo/semantics/article info:eu-repo/semantics/article