2024-03-28T13:10:56Zhttps://gredos.usal.es/oai/requestoai:gredos.usal.es:10366/1219702022-02-07T14:44:46Zcom_10366_4101com_10366_4055com_10366_3946com_10366_3823col_10366_4102
Íñiguez de la Torre, Ana
Íñiguez-de-la-Torre, Ignacio
González, Tomás
Mateos López, Javier
2013-07-03T19:30:43Z
2013-07-03T19:30:43Z
2011
Iñiguez-de-la-Torre, A., Iñiguez-de-la-Torre, I., González, T., y Mateos, J. (2011). Correlation between lowfrequency current-noise enhancement and high-frequency oscillations in GaN-based planar nanodiodes: A Monte Carlo study. Applied Physics Letters, 99, 062109.
http://hdl.handle.net/10366/121970
We present a spectral analysis of time sequences of current, calculated by means of Monte Carlo simulations, in GaN-based asymmetric nanodiodes, devices that are potential candidates to exhibit Gunn oscillations. It is found that the low-frequency noise increases significantly for biases close to the threshold voltage of Gunn oscillations, taking place at much higher frequencies of hundreds of GHz. Due to the inherent difficulty in detecting so fast fluctuations, the measurement of the low-frequency noise can be a quite useful tool for predicting current oscillations at sub-THz frequencies in these devices.
eng
Attribution-NonCommercial-NoDerivs 3.0 Unported
https://creativecommons.org/licenses/by-nc-nd/3.0/
info:eu-repo/semantics/openAccess
Gunn oscillations
Monte Carlo method
GaN
Nanodevices
22 Física
Correlation between lowfrequency current-noise enhancement and high-frequency oscillations in GaN-based planar nanodiodes: A Monte Carlo study
info:eu-repo/semantics/article
info:eu-repo/semantics/article