2024-03-28T11:27:30Zhttps://gredos.usal.es/oai/requestoai:gredos.usal.es:10366/1306992022-02-07T15:41:58Zcom_10366_4531com_10366_4512com_10366_3823col_10366_4532
Pardo Santos, Diego
Grajal de la Fuente, Jesús
Pérez Santos, María Susana
2016-10-06T11:34:04Z
2016-10-06T11:34:04Z
2016
Electrical and noise modelling of GaAs Schottky diode mixers in the THz band - D. Pardo, J. Grajal, and S. Pérez - IEEE Transactions on Terahertz Science and Technology 6, 69-82 (2016)
http://hdl.handle.net/10366/130699
10.1109/TTHZ.2015.2502061
This paper presents a simulation tool for the analysis
and design of Schottky mixers which is able to evaluate self-consistently
both the conversion losses and the noise temperature. The
tool is based on a Monte Carlo model of the diode coupled with a
multi-tone harmonic balance technique. A remarkable feature of
this tool is that it avoids the need of analytical or empirical models.
The validation of the tool has been carried out by comparing simulation
results with measurements of mixers published in the literature
up to 2.5 THz. The usefulness of Schottky diodes as frequency
mixers above 2.5 THz is analyzed. Additionally, the range
of application and the limitations of simpler simulation tools based
on lumped equivalent circuits or drift-diffusion models have been
evaluated using the Monte Carlo model as a reference.
application/pdf
eng
Attribution-NonCommercial-NoDerivs 3.0 Unported
https://creativecommons.org/licenses/by-nc-nd/3.0/
info:eu-repo/semantics/openAccess
THz
Noise
Schottky diodes
Electrical and Noise Modeling of GaAs Schottky Diode Mixers in the THz Band
info:eu-repo/semantics/article
MIDAS FP7-SPACE-2009-1
TEC2011-28683-C02-01
TEC2013-41640-R
TEC2014-53815-R
CDS2008-00068
S2013/ICE-3000
SA052U13