2024-03-28T21:28:25Zhttps://gredos.usal.es/oai/requestoai:gredos.usal.es:10366/1221892022-02-07T14:44:50Zcom_10366_4101com_10366_4055com_10366_3946com_10366_3823col_10366_4102
Rodilla, Helena
González Sánchez, Tomás
Moschetti, Giuseppe
Grahn, Jan
Mateos López, Javier
2010
In this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surface charges in the gate recess and the possible variation of electron sheet carrier density, ns, has been studied. A decrease in the gate-source capacitance, transconductance and intrinsic cut-off frequency is observed because of the presence of the native oxide, while changes in the value of the surface charges in the recess only introduce a threshold voltage shift. The increase of ns shifts the maximum of the transconductance and intrinsic cut-off frequency to higher values of drain current and improves the agreement with the experimental results.
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http://hdl.handle.net/10366/122189
eng
22 Física
Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
info:eu-repo/semantics/article
TEXT
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