2024-03-28T21:02:55Zhttps://gredos.usal.es/oai/requestoai:gredos.usal.es:10366/1221892022-02-07T14:44:50Zcom_10366_4101com_10366_4055com_10366_3946com_10366_3823col_10366_4102
Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
Rodilla, Helena
González Sánchez, Tomás
Moschetti, Giuseppe
Grahn, Jan
Mateos López, Javier
InAs HEMTs
Monte Carlo method
In this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surface charges in the gate recess and the possible variation of electron sheet carrier density, ns, has been studied. A decrease in the gate-source capacitance, transconductance and intrinsic cut-off frequency is observed because of the presence of the native oxide, while changes in the value of the surface charges in the recess only introduce a threshold voltage shift. The increase of ns shifts the maximum of the transconductance and intrinsic cut-off frequency to higher values of drain current and improves the agreement with the experimental results.
2013-10-04
2013-10-04
2010
info:eu-repo/semantics/article
Rodilla, H. et al. (2010). Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs. Semicond. Sci Technol. 26, 025004.
http://hdl.handle.net/10366/122189
eng
https://creativecommons.org/licenses/by-nc-nd/3.0/
info:eu-repo/semantics/openAccess
Attribution-NonCommercial-NoDerivs 3.0 Unported