2024-03-29T00:01:33Zhttps://gredos.usal.es/oai/requestoai:gredos.usal.es:10366/1306962022-02-07T15:41:58Zcom_10366_4531com_10366_4512com_10366_3823col_10366_4532
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García Sánchez, Sergio
author
Íñiguez-de-la-Torre, Ignacio
author
Mateos López, Javier
author
González Sánchez, Tomás
author
Pérez Santos, María Susana
author
2016
In this paper, we present results from the simulations of a submicrometer AlGaN/GaN highelectron-
mobility transistor (HEMT) by using an in-house electro-thermal Monte Carlo
simulator. We study the temperature distribution and the influence of heating on the transfer
characteristics and the transconductance when the device is grown on different substrates
(sapphire, silicon, silicon carbide and diamond). The effect of the inclusion of a thermal
boundary resistance (TBR) is also investigated. It is found that, as expected, HEMTs fabricated
on substrates with high thermal conductivities (diamond) exhibit lower temperatures, but the
difference between hot-spot and average temperatures is higher. In addition, devices fabricated
on substrates with higher thermal conductivities are more sensitive to the value of the TBR
because the temperature discontinuity is greater in the TBR layer.
Impact of substrate and thermal boundary resistance on the performance of AlGaN/ GaN HEMTs analyzed by means of electrothermal Monte Carlo simulations - S. García, I. Íñiguez-de-la-Torre, J. Mateos, T. González and S. Pérez - Semiconductor Science and Technology 31, 065005 [1-9] (2016)
http://hdl.handle.net/10366/130696
10.1088/0268-1242/31/6/065005
Heating
GaN HEMTs
Thermal resistance
Thermal conductance
Substrate
Impact of substrate and thermal boundary resistance on the performance of AlGaN/ GaN HEMTs analyzed by means of electrothermal Monte Carlo simulations