2024-03-28T23:30:36Zhttps://gredos.usal.es/oai/requestoai:gredos.usal.es:10366/1471402022-02-07T15:41:46Zcom_10366_4531com_10366_4512com_10366_3823col_10366_4532
Gestión del Repositorio Documental de la Universidad de Salamanca
author
García Sánchez, Sergio
author
Íñiguez de la Torre Mulas, Ignacio
author
Pérez Santos, María Susana
author
Ranjan, K.
author
Agrawal, Manvi
author
Lingaparthi, R.
author
Nethaji, Dharmarasu
author
Radhakrishnan, K.
author
Arulkumaran, S.
author
Ng, G. I.
author
González Sánchez, Tomás
author
Mateos López, Javier
2021-09-13T09:19:17Z
2021-09-13T09:19:17Z
2021
García-Sánchez, S. et al (2021). Non-linear thermal resistance model for the simulation of high power GaN-based devices. Semicond. Sci. Technol. 36 055002. https://doi.org/10.1088/1361-6641/abeb83
0268-1242
http://hdl.handle.net/10366/147140
10.1088/1361-6641/abeb83
1361-6641
[EN]We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance is able to account for the self-heating effects at low power, the decrease of the thermal conductance of semiconductors when the lattice temperature increases, makes necessary the use of temperature dependent thermal resistance models. Moreover, in order to correctly account for the steep increase of the thermal resistance of GaN devices at high temperature, where commonly used models fail, we propose a non-linear model which, included in an electro-thermal Monte Carlo simulator, is able to reproduce the strongly non-linear behavior of the thermal resistance observed in experiments at high DC power levels. The accuracy of the proposed non-linear thermal resistance model has been confirmed by means of the comparison with pulsed and DC measurements made in devices specifically fabricated on doped GaN, able to reach DC power levels above 150 W mm−1 at biases below 30 V.
eng
Attribution-NonCommercial-NoDerivatives 4.0 Internacional
Electrothermal effects
GaN
Power semiconductor devices
Thermal resistance
Non-linear thermal resistance model for the simulation of high power GaN-based devices
info:eu-repo/semantics/article
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https://gredos.usal.es/bitstream/10366/147140/1/SST-2021.pdf
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SST-2021.pdf.txt