2024-03-29T14:34:51Zhttps://gredos.usal.es/oai/requestoai:gredos.usal.es:10366/1471432023-02-01T11:58:27Zcom_10366_4531com_10366_4512com_10366_3823col_10366_4532
Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
Orfao, Beatriz
García Vasallo, Beatriz
Pérez Santos, María Susana
Mateos López, Javier
Moro-Melgar, Diego
Zaknoune, M.
González Sánchez, Tomás
Dielectric passivation
Edge effects
Monte Carlo
Permitivity
Schottky barrier diodes
[EN]The influence of passivation on the edge effects (EEs) present in the capacitance–voltage (C–V ) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is analyzed by means of Monte Carlo simulations. The enhancement of the performance of SBDs as frequency multipliers is based on the optimization of the nonlinearity of the C–V curve, where EEs, strongly influenced by the dielectric passivation of the diode, play a significant role and must be carefully considered. The
extra capacitance associated with EEs is affected by the presenceof surface charges at the semiconductor/dielectric interface,which is considered bymeans of a self-consistent model in which the local value of the surface charge is updated according to the surrounding electron density. Our results indicate that, in realistic SBD geometries, a higher dielectric constant of the passivationmaterial leads tomore pronounced EEs. The thickness of the dielectric and the lateral extension of the epilayer are also important parameters to be taken into account when dealing with EEs.
2021-09-13T09:53:04Z
2021-09-13T09:53:04Z
2021-09-13T09:53:04Z
2021
info:eu-repo/semantics/article
Orfao, B. et al. (2021). Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes. IEEE Transactions on Electron Devices, 68.(9), pp. 4296-4301. doi: 10.1109/TED.2021.3097703
0018-9383
http://hdl.handle.net/10366/147143
10.1109/TED.2021.3097703
1557-9646
eng
https://doi.org/10.1109/TED.2021.3097703
SA254P18
TEC2017-83910-R
http://creativecommons.org/licenses/by-nc-nd/4.0/
info:eu-repo/semantics/openAccess
Attribution-NonCommercial-NoDerivatives 4.0 Internacional
IEEE