RT info:eu-repo/semantics/article
T1 Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length
A1 García Sánchez, Sergio
A1 Íñiguez-de-la-Torre, Ignacio
A1 Pérez Santos, María Susana
A1 Mateos López, Javier
A1 González Sánchez, Tomás
K1 Nanodevices
K1 SSDs
K1 Gunn Oscillations
K1 Monte Carlo method
K1 22 Física
AB In this work, we report on Monte Carlo simulations of InP and GaN vertical Gunn diodes to optimize their oscillation frequency and DC to AC conversion efficiency. We show that equivalent operating conditions are achieved by the direct application of a sinusoidal AC voltage superimposed to the DC bias and by the simulation of the intrinsic device coupled with the consistent solution of a parallel RLCresonant circuit connected in series. InP diodes with active region about 1 μm offer a conversion efficiency up to 5.5 % for frequencies around 225 GHz. By virtue of the larger saturation velocity, for a given diode length, oscillation frequencies in GaN diodes are higher than for InP structures. Current oscillations at frequencies as high as 675 GHz, with 0.1 % efficiency, are predicted at the sixth generation band in a 0.9 μm long GaN diode, corroborating the suitability of GaN to operate near the THz band. At the first generation band, structures with notch in general provide lower oscillation frequencies and efficiencies in comparison with the same structures without notch.However, a higher number of generation bands are originated in notched diodes, thus typically reaching larger frequencies. Self-heating effects reduce the performance, but in GaN diodes the efficiency is not significantly degraded.
YR 2013
FD 2013
LK http://hdl.handle.net/10366/122099
UL http://hdl.handle.net/10366/122099
LA eng
NO Journal of Applied Physics 114, 074503 (2013)
NO ROOTHz project (FP7-243845)
DS Gestión del Repositorio Documental de la Universidad de Salamanca
RD 16-sep-2019