RT info:eu-repo/semantics/article
T1 Experimental analysis of shot‐noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature
A1 García Pérez, Óscar Alberto
A1 Mateos López, Javier
A1 Pérez Santos, María Susana
A1 González Sánchez, Tomás
A1 Westlund, Andreas
A1 Grahn, Jan
K1 Shot noise
K1 Coulomb interaction
K1 InGaAs diodes
AB In this work, current noise measurements of submicron InGaAs/InAlAs recessed planar diodes are presented. The presence of a barrier in the potential profile under the recess may affect the propagation statistics of the carriers, which in turn would lead to suppressed shot noise levels. However, evidencing this noise suppression from the measurements is challenging, due to the undesired effects from the accesses and contact resistances. The presented results are provided as a starting point for a future de-embedding process to precisely determine the actual noise properties below the recess.
PB IEEE
YR 2015
FD 2015
LK http://hdl.handle.net/10366/130681
UL http://hdl.handle.net/10366/130681
LA eng
NO Ó. García-Pérez, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González; Experimental analysis of shot‐noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature; 2015 International Conference on Noise and Fluctuations, ICNF 2015; DOI: 10.1109/ICNF.2015.7288539
DS Gestión del Repositorio Documental de la Universidad de Salamanca
RD 23-abr-2024