TY  - JOUR 
AU  - Vasallo, Beatriz G.
AU  - Rodilla, Helena
AU  - González Sánchez, Tomás
AU  - Moschetti, Giuseppe
AU  - Grahn, Jan
AU  - Mateos López, Javier
PY  - 2012
UR  - http://hdl.handle.net/10366/122101
AB  - Kink effect can spoil the otherwise excellent low-noise performance of InAs/AlSb HEMTs. It has its origin in the pile up of holes (generated by impact ionization) taking place mainly at the drain side of the buffer, which leads to a reduction of the...
LA  - eng
KW  - InAs HEMTs
KW  - Monte Carlo method
KW  - Noise
KW  - Kink effect
TI  - Kink effect and noise performance in isolated-gate InAs/AlSb High Electron Mobility Transistors
ER  -