TY  - JOUR 
AU  - Kaushal, Vikas
AU  - Íñiguez-de-la-Torre, Ignacio
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
AU  - Lee, Bongmook
AU  - Misra, Veena
AU  - Margala, Martin
PY  - 2012
SN  - 0741-3106
UR  - http://hdl.handle.net/10366/122106
AB  - This letter presents a first successful integration of a high-k dielectric, Al2O3, with III-V semiconductors in ballistic deflection transistors (BDT). The Al2O3 is deposited by means of atomic layer deposition allowing the formation of uniform layers...
LA  - eng
KW  - Nanodevices
KW  - Monte Carlo method
KW  - Ballistic transport
TI  - Effects of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors
ER  -