TY  - JOUR 
AU  - Vasallo, Beatriz G.
AU  - Rodilla, Helena
AU  - González Sánchez, Tomás
AU  - Lefebvre, Eric
AU  - Moschetti, Giuseppe
AU  - Grahn, Jan
AU  - Mateos López, Javier
PY  - 2010
SN  - 0021-8979
UR  - http://hdl.handle.net/10366/122112
AB  - A semiclassical 2D ensemble Monte Carlo simulator is used to perform a physical microscopic analysis of kink effect in InAs/AlSb High Electron Mobility Transistors (HEMTs). Due to the small bandgap of InAs, these devices are very susceptible to suffer...
LA  - eng
KW  - InAs HEMTs
KW  - Monte Carlo method
KW  - Impact Ionization
KW  - Kink effect
TI  - Monte Carlo study of kink effect in Isolated-Gate InAs/AlSb High Electron Mobility Transistors
ER  -