TY  - JOUR 
AU  - Rodilla, Helena
AU  - González Sánchez, Tomás
AU  - Moschetti, Giuseppe
AU  - Grahn, Jan
AU  - Mateos López, Javier
PY  - 2010
UR  - http://hdl.handle.net/10366/122189
AB  - In this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a...
LA  - eng
KW  - InAs HEMTs
KW  - Monte Carlo method
TI  - Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
DO  - 10.1088/0268-1242/26/2/025004
ER  -