TY  - JOUR 
AU  - Moro-Melgar, Diego
AU  - Maestrini, Alain
AU  - Treuttel, Jeanne
AU  - Gatilova, Lina
AU  - González Sánchez, Tomás
AU  - García Vasallo, Beatriz
AU  - Mateos López, Javier
PY  - 2016
UR  - http://hdl.handle.net/10366/130698
AB  - Nanometer scale planar Schottky barrier
diodes (SBDs) with realistic geometries have been studied
by means of a 2-D ensemble Monte Carlo simulator. The
topology of the devices studied in this paper is based in real
planar GaAs SBDs used in...
LA  - eng
PB  - IEEE
KW  - Monte Carlo method
KW  - Capacitance
KW  - Schottky diodes
KW  - Fringing effects
TI  - Monte Carlo Study of 2-D Capacitance Fringing Effects in GaAs Planar Schottky Diodes
DO  - 10.1109/TED.2016.2601341
ER  -