TY  - JOUR 
AU  - Karishy, Slyman
AU  - Palermo, Christophe
AU  - Sabatini, Giulio
AU  - Marinchio, Hugues
AU  - Varani, Luca
AU  - Mateos López, Javier
AU  - González Sánchez, Tomás
PY  - 2017
UR  - http://hdl.handle.net/10366/133629
AB  - [EN]The increase of modern electronics performances depends on the ability to grow high-frequency, low-noise and low-power devices. Nowadays, InP technology is mature and In0.53Ga0.47As is clearly a material of interest. Moreover, Sb-based devices...
LA  - eng
PB  - IEEE
KW  - InGaAs
KW  - Noise
KW  - Monte Carlo method
TI  - Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
DO  - 10.1109/ICNF.2017.7985941
ER  -