TY  - JOUR 
AU  - García Vasallo, Beatriz
AU  - González Sánchez, Tomás
AU  - Talbo, Vincent
AU  - Lechaux, Yoann
AU  - Wichmann, Nicolas
AU  - Bollaert, Sylvain
AU  - Mateos López, Javier
PY  - 2018
UR  - http://hdl.handle.net/10366/138063
AB  - [EN]III-V Impact-ionization (II) metal-oxide-semiconductor FETs (I-MOSFETs) and tunnel FETs
(TFETs) are being explored as promising devices for low-power digital applications. To assist the
development of these devices from the physical point of...
LA  - eng
PB  - American Institute of Physics
KW  - Impact ionization
KW  - Monte Carlo method
KW  - InGaAs
KW  - Tunneling
TI  - Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis
ER  -