TY  - JOUR 
AU  - Lechaux, Yoann
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - Novoa López, José Antonio
AU  - García Pérez, Óscar Alberto
AU  - Sánchez Martín, Héctor
AU  - Millithaler, Jean Francois
AU  - Vaquero Monte, Daniel
AU  - Delgado Notario, Juan Antonio
AU  - Clericò, Vito
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
PY  - 2020
SN  - 0268-1242
UR  - http://hdl.handle.net/10366/144051
AB  - [EN]In this work, In0.53Ga0.47As planar Gunn diodes specifically designed for providing oscillations
at frequencies below 30 GHz have been fabricated and characterized. Different types of
measurements were used to define a set of consistent methods...
LA  - eng
KW  - Gunn oscillations
KW  - III-V semiconductors
KW  - InGaAs
KW  - Nanofabrication
KW  - RF measurements
KW  - Noise power density
TI  - Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
DO  - 10.1088/1361-6641/abab1f
T2  - Semiconductor Science and Technology
VL  - 35
M2  - 115009
ER  -