TY  - JOUR 
AU  - Orfao e Vale Tabernero, Beatriz
AU  - García Vasallo, Beatriz
AU  - Moro-Melgar, Diego
AU  - Pérez Santos, María Susana
AU  - Mateos López, Javier
AU  - González Sánchez, Tomás
PY  - 2020
SN  - 0018-9383
UR  - http://hdl.handle.net/10366/144052
AB  - [EN]In this article, by means of a 2-D ensemble
Monte Carlo simulator, the Schottky barrier diodes (SBDs)
with realistic geometries based on GaAs and GaN
are studied as promising devices for increasing the
high-frequency performance- and...
LA  - eng
KW  - Edge effects
KW  - GaAs
KW  - Monte Carlo method
KW  - Schottky diodes
KW  - GaN
TI  - Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes
DO  - 10.1109/TED.2020.3007374
T2  - IEEE Transactions on Electron Devices
VL  - 67
M2  - 3530
ER  -