TY  - JOUR 
AU  - Agrawal, Manvi
AU  - Nethaji, Dharmarasu
AU  - Radhakrishnan, K.
AU  - Gaquiere, Christophe
AU  - Ducournau, Guillaume
AU  - Lesecq, Marie
AU  - Mateos López, Javier
AU  - González Sánchez, Tomás
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - Sergio, García Sánchez
AU  - Pérez Santos, María Susana
PY  - 2019
UR  - http://hdl.handle.net/10366/144053
AB  - [EN]Switching diode (SSD) structure on SiC, designed using
Monte Carlo simulations, for the fabrication of nano-scale SSDs to
reach THz emission as a result of Gunn oscillations. Crack-free
epistructure with good epi-characteristics and uniformity...
LA  - eng
KW  - Gunn diodes
KW  - THz
KW  - GaN
KW  - SiC
KW  - PA-MBE
TI  - GaN-based SSD structure for THz applications
DO  - 10.1109/APMC46564.2019.9038338
T2  - 2019 IEEE Asia-Pacific Microwave Conference (APMC)
M2  - 213
ER  -