TY  - JOUR 
AU  - Mateos López, Javier
AU  - González Sánchez, Tomás
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - Sergio, García Sánchez
AU  - Pérez Santos, María Susana
AU  - Gaquiere, Christophe
AU  - Ducournau, Guillaume
AU  - Lesecq, Marie
AU  - Agrawal, Manvi
AU  - Nethaji, Dharmarasu
AU  - Radhakrishnan, K.
PY  - 2019
UR  - http://hdl.handle.net/10366/144054
AB  - [EN]With the aim of producing free-running Gunn
oscillations in GaN devices, we propose the use of planar
asymmetrically shaped nanodiodes. The key novelty of our
approach is the use of an active layer of highly doped bulk GaN,
and not the typical...
LA  - eng
KW  - Gunn diodes
KW  - Doped GaN
KW  - Monte Carlo method
TI  - Design and Fabrication of Planar Gunn Nanodiodes Based on Doped GaN
DO  - 10.1109/APMC46564.2019.9038486
T2  - 2019 IEEE Asia-Pacific Microwave Conference (APMC)
M2  - 971
ER  -