TY  - JOUR 
AU  - Pérez Martín, Elsa
AU  - Vaquero Monte, Daniel
AU  - Sánchez Martín, Héctor
AU  - Gaquiere, Christophe
AU  - Raposo Funcia, Víctor Javier
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
AU  - Íñiguez de la Torre Mulas, Ignacio
PY  - 2020
SN  - 0026-2714
UR  - http://hdl.handle.net/10366/147139
AB  - The presence of trap states in self-switching diodes (SSD) based on an AlGaN/GaN heterojunction has been identified by means of their AC characterization between 75 kHz to 30 MHz in a wide temperature range, from 80 K to 300 K. Measurements allow us...
LA  - eng
PB  - Elsevier
KW  - Traps
KW  - GaN
KW  - MIcrowave detection
KW  - Self-switching diodes
TI  - Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements
DO  - 10.1016/j.microrel.2020.113806
T2  - Microelectronics Reliability
VL  - 114
M2  - 113806
ER  -