TY  - JOUR 
AU  - García Sánchez, Sergio
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - Pérez Santos, María Susana
AU  - Ranjan, K.
AU  - Agrawal, Manvi
AU  - Lingaparthi, R.
AU  - Nethaji, Dharmarasu
AU  - Radhakrishnan, K.
AU  - Arulkumaran, S.
AU  - Ng, G. I.
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
PY  - 2021
SN  - 0268-1242
UR  - http://hdl.handle.net/10366/147140
AB  - [EN]We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance is able to account for the self-heating effects at low power, the decrease of the thermal conductance of semiconductors when the lattice...
LA  - eng
PB  - IOP Publishing
KW  - Electrothermal effects
KW  - GaN
KW  - Power semiconductor devices
KW  - Thermal resistance
TI  - Non-linear thermal resistance model for the simulation of high power GaN-based devices
DO  - 10.1088/1361-6641/abeb83
T2  - Semiconductor Science and Technology
VL  - 36
M2  - 055002
ER  -