TY  - JOUR 
AU  - Orfao, Beatriz
AU  - García Vasallo, Beatriz
AU  - Pérez Santos, María Susana
AU  - Mateos López, Javier
AU  - Moro-Melgar, Diego
AU  - Zaknoune, M.
AU  - González Sánchez, Tomás
PY  - 2021
SN  - 0018-9383
UR  - http://hdl.handle.net/10366/147143
AB  - [EN]The influence of passivation on the edge effects (EEs) present in the capacitance–voltage (C–V ) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is analyzed by means of Monte Carlo simulations. The enhancement of the...
LA  - eng
PB  - IEEE
KW  - Dielectric passivation
KW  - Edge effects
KW  - Monte Carlo
KW  - Permitivity
KW  - Schottky barrier diodes
TI  - Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes
DO  - 10.1109/TED.2021.3097703
T2  - IEEE Transactions on Electron Devices
VL  - 68
M2  - 4296
ER  -