TY  - JOUR 
AU  - Sergio, García Sánchez
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - Pérez Santos, María Susana
AU  - González Sánchez, Tomás
PY  - 2024
SN  - 0018-9383
UR  - http://hdl.handle.net/10366/159401
AB  - [EN]—An investigation into self-switching diodes based
 on highly doped GaN is conducted under direct current (DC)
 bias conditions. Different device geometries are explored under
 various lattice temperatures and polarization scenarios. Also,...
LA  - eng
PB  - IEEE
TI  - Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature
DO  - 10.1109/TED.2024.3438114
T2  - IEEE Transactions on Electron Devices
M2  - 1
ER  -