TY  - JOUR 
AU  - Sánchez Martín, Héctor
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - Sergio, García Sánchez
AU  - Mateos López, Javier
AU  - González, Tomás
PY  - 2022
SN  - 0038-1101
UR  - http://hdl.handle.net/10366/159428
AB  - [EN] The influence of thermal effects in AlGaN/GaN HEMTs is studied by means of Monte Carlo simulations. Measured
output and transfer characteristics of a transistor are well reproduced using two techniques, a thermal-resistance
method and an...
LA  - eng
PB  - Elsevier
KW  - AlGaN/GaN HEMT
KW  - Monte Carlo
KW  - Thermal effects
KW  - Thermal resistance
KW  - Heat-conduction equation
KW  - Small-signal equivalent circuit
TI  - Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs
DO  - 10.1016/j.sse.2022.108289
T2  - Solid-State Electronics
VL  - 193
M2  - 1
ER  -