TY  - JOUR 
AU  - Peña, R. A.
AU  - Orfao, B.
AU  - Íñiguez-de-la-Torre, I.
AU  - Paz, G.
AU  - Daher, M. A.
AU  - Roelens, Y.
AU  - Zaknoune, M.
AU  - Mateos, J.
AU  - González, T.
AU  - Vasallo, B. G.
AU  - Pérez, S.
PY  - 2024
SN  - 0018-9383
UR  - http://hdl.handle.net/10366/160314
AB  - [EN]The hysteresis cycles observed in the reverse leakage current measured at low temperatures in GaN-on-Sapphire Schottky Barrier Diodes (SBDs) have been deeply studied and interpreted in terms of trap-assisted tunneling compatible with the existence...
LA  - eng
PB  - IEEE
KW  - Schottky barrier diode
KW  - GaN technologies
KW  - Trapping effects
KW  - Cryogenic temperatures
TI  - Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
DO  - 10.1109/TED.2024.3409202
T2  - IEEE Transactions on Electron Devices
VL  - 71
M2  - 4524
ER  -