TY  - JOUR 
AU  - Orfao e Vale Tabernero, Beatriz
AU  - Abou-Daher, Mahmoud
AU  - Zegaoui, Malek
AU  - Mateos López, Javier
AU  - Okada, Etienne
AU  - Lepilliet, Silvie
AU  - Ducournau, Guilaume
AU  - Zaknoune, Mohammed
AU  - Roelens, Yannick
PY  - 2024
UR  - http://hdl.handle.net/10366/160316
AB  - [EN]GaN-on-sapphire Schottky barrier diodes (SBDs) have been fabricated for frequency multiplier applications. A complete set of characterization has been done, including DC and RF measurements. A model to extract the Schottky parameters from...
LA  - eng
PB  - IEEE
KW  - Schottky barrier diode
KW  - Equivalent circuit
KW  - S parameters
KW  - GaN
TI  - GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
DO  - 10.23919/EuMIC61603.2024.10732802
T2  - Proceedings of the 19th European Microwave Integrated Circuits Conference
M2  - 375
ER  -