TY  - JOUR 
AU  - Castelló, O.
AU  - López Baptista, Sofia M.
AU  - Watanabe, K.
AU  - Taniguchi, T.
AU  - Díez Fernández, Enrique
AU  - Velázquez Pérez, Jesús Enrique
AU  - Meziani, Yahya Moubarak
AU  - Caridad Hernández, José Manuel
AU  - Delgado Notario, Juan Antonio
PY  - 2024
SN  - 2095-2767
UR  - http://hdl.handle.net/10366/163234
AB  - [EN]In recent years, graphene field-effect-transistors (GFETs) have demonstrated an outstanding potential for terahertz (THz)
photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz...
LA  - eng
PB  - Springer nature
KW  - Graphene
KW  - THz
KW  - Photodetector
KW  - Field-effect transistor
KW  - Plasmonic
TI  - Impact of device resistances in the performance of graphene-based terahertz photodetectors
DO  - 10.1007/s12200-024-00122-6
T2  - Frontiers of Optoelectronics
VL  - 17
ER  -