TY  - JOUR 
AU  - Sergio, García Sánchez
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
PY  - 2025
SN  - 0018-9383
UR  - http://hdl.handle.net/10366/163596
AB  - [EN]This study investigates the performance of planar Gunn diodes based on highly doped Gallium Nitride using Monte Carlo simulations. The conversion efficiency is evaluated in geometrically V-shaped channels with an active region length of 500 nm, an...
LA  - eng
PB  - Institute of Electrical and Electronics Engineers
KW  - DC-to-ac conversion efficiency
KW  - Doped gallium nitride (GaN) diode
KW  - GaN
KW  - Gunn diode
KW  - Monte Carlo simulations
KW  - Oscillation frequency
TI  - Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature
DO  - 10.1109/TED.2025.3537591
T2  - IEEE Transactions on Electron Devices
ER  -