TY  - JOUR 
AU  - Usih, Ebenezer C.
AU  - Hassan, Naimul
AU  - Edwards, Alexander J.
AU  - García Sánchez, Felipe
AU  - Khalili Amiri, Pedram
AU  - Friedman, Joseph S.
PY  - 2025
SN  - 1063-8210
UR  - http://hdl.handle.net/10366/165858
AB  - [EN]Toggle spin-orbit torque (SOT)-driven magnetoresistive random access memory (MRAM) with perpendicular anisotropy has a simple material stack and is more robust than directional SOT-MRAM. However, a read-before-write operation is required to use...
LA  - eng
PB  - IEEE
KW  - Magnetism
KW  - Computational physics
KW  - SOT-MRAM
TI  - Toggle SOT-MRAM Architecture With Self-Terminating Write Operation
DO  - 10.1109/TVLSI.2024.3471528
T2  - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
VL  - 33
M2  - 337
ER  -