TY  - JOUR 
AU  - Garcia Sanchez, S.
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - Pérez Santos, María Susana
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
PY  - 2022
SN  - 0018-9383
UR  - http://hdl.handle.net/10366/167222
AB  - [EN]By means of Monte Carlo simulations of gallium nitride(GaN) planar Gunn diodes,the epilayer structure
 on which they are fabricated is optimized in order to achieve
 ultrahigh-frequency oscillations. Practical considerations,
 such as the...
LA  - eng
PB  - IEEE
KW  - Doped gallium nitride(GaN)
KW  - Monte Carlo simulations
KW  - Gunn diodes
KW  - Terahertz (THz) generation
TI  - Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
DO  - 10.1109/TED.2021.3134927
T2  - IEEE Transactions on Electron Devices
VL  - 69
M2  - 514
ER  -