TY  - JOUR 
AU  - Orfao, Beatriz
AU  - García Vasallo, Beatriz
AU  - Moro-Melgar, Diego
AU  - Zaknoune, M.
AU  - Gioia, G. Di
AU  - Samnouni, M.
AU  - Pérez Santos, María Susana
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
PY  - 2021
UR  - http://hdl.handle.net/10366/147145
AB  - [EN]Schottky barrier diodes (SBDs) with realistic geometries have been studied by means of a 2-D ensemble Monte Carlo simulator. The non-linearity of the Capacitance-Voltage (C-V) characteristic is the most important parameter for optimizing SBDs as...
LA  - eng
PB  - IEEE
KW  - Edge effects
KW  - Monte Carlo
KW  - Schottky barrier diodes
KW  - Permitivity
KW  - Dielectric
KW  - Fringing capacitance
TI  - Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations
DO  - 10.1109/CDE52135.2021.9455727
T2  - 2021 13th Spanish Conference on Electron Devices (CDE)
M2  - 94
ER  -