TY  - JOUR 
AU  - González Sánchez, Tomás
AU  - Orfao, Beatriz
AU  - Pérez Santos, María Susana
AU  - Mateos López, Javier
AU  - García Vasallo, Beatriz
PY  - 2023
SN  - 1882-0778
UR  - http://hdl.handle.net/10366/167231
AB  - [EN]This work shows that for a correct analysis of Schottky barrier diodes operating under strong reverse-bias conditions, it is necessary to account for
 the self-consistency between the shape of the energy barrier and carrier concentration in the...
LA  - eng
PB  - The Japan Society of Applied Physics
KW  - Schottky-barrier  diode
KW  - Impact ionization
KW  - GaN
KW  - Tunnel injection
TI  - Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions
DO  - 10.35848/1882-0786/acb9d4
T2  - Applied Physics Express
VL  - 16
M2  - 024003
ER  -