TY  - JOUR 
AU  - Orfao, Beatriz
AU  - Abou-Daher, Mahmoud
AU  - Peña, R. A.
AU  - García Vasallo, Beatriz
AU  - Pérez Santos, María Susana
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - Paz-Martínez, G.
AU  - Mateos López, Javier
AU  - Roelens, Yannick
AU  - Zaknoune, Mohammed
AU  - González Sánchez, Tomás
PY  - 2024
SN  - 0021-8979
UR  - http://hdl.handle.net/10366/167232
AB  - [EN]In this paper, we report an analysis of reverse current mechanisms observed in GaN Schottky barrier diodes leading to hysteretic behavior
 of the I–V curves at low temperature. By means of DC measurements from 33 to 475K, we demonstrate the...
LA  - eng
PB  - AIP
KW  - GaN
KW  - Schottky barrier diode
KW  - current hysteresis
KW  - Reverse-bias
TI  - Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
DO  - 10.1063/5.0177853
T2  - Journal of Applied Physics
VL  - 135
ER  -