TY  - JOUR 
AU  - Sánchez Martín, Héctor
AU  - Cótimos Nunes, Luís
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - Pérez Martín, Elsa
AU  - Pérez Santos, María Susana
AU  - Mateos López, Javier
AU  - González Sánchez, Tomás
AU  - Carlos Pedro, José
PY  - 2024
SN  - 0018-9480
UR  - http://hdl.handle.net/10366/167233
AB  - [EN]AlGaN/GaN nanodiodes consisting of an array
 of several nanochannels in parallel are potential candidates
 for detection in the terahertz (THz) range. The nanochannels
 are fabricated by etching two isolating trenches and show a
...
LA  - eng
PB  - IEEE
KW  - AlGaN/GaN devices
KW  - Detectors
KW  - Diodes
KW  - Terahertz  (THz)
KW  - Trapping effects
TI  - Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements
DO  - 10.1109/TMTT.2024.3393297
T2  - IEEE Transactions on Microwave Theory and Techniques
VL  - 72
M2  - 5609
ER  -