TY  - JOUR 
AU  - García-Sánchez, S
AU  - Pérez, S
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - García Vasallo, Beatriz
AU  - Huo, L
AU  - Lingaparthi, R
AU  - Nethaji, D
AU  - Radhakrishnan, K
AU  - Abou Daher, M
AU  - Lesecq, M
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
PY  - 2024
SN  - 0022-3727
UR  - http://hdl.handle.net/10366/167239
AB  - [EN]Impact ionization originated by the buffer leakage current, together with high electric fields
 (>3 MVcm−1) at the anode corner of the isolating trenches, has been identified as the failure
 mechanism of shaped planar GaN Gunn diodes when biased...
LA  - eng
PB  - IOP
KW  - Doped GaN
KW  - Gunn diodes
KW  - Monte Carlo simulations
KW  - THz generation
TI  - Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact
DO  - 10.1088/1361-6463/ad809f
T2  - Journal of Physics D: Applied Physics
VL  - 58
M2  - 015112
ER  -