TY  - JOUR 
AU  - Sergio, García Sánchez
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - Mateos López, Javier
AU  - González Sánchez, Tomás
PY  - 2025
UR  - http://hdl.handle.net/10366/168892
AB  - [EN]Self-heating significantly impacts the performance and reliability of GaN high electron mobility transistors, but capturing these effects with electrothermal Monte Carlo (MC) simulations is computationally intensive. This paper presents the...
LA  - eng
PB  - AIP Publishing
KW  - Electronic transport
KW  - Two-dimensional electron gas
KW  - Semiconductors
KW  - Field effect transistors
KW  - Heterostructures
KW  - Deep learning
KW  - Artificial neural networks
KW  - Monte Carlo methods
TI  - Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight
DO  - 10.1063/5.0279834
T2  - Journal of Applied Physics
VL  - 138
M2  - 1
ER  -