TY  - JOUR 
AU  - Orfao, Beatriz
AU  - Peña, R. A.
AU  - García Vasallo, Beatriz
AU  - Pérez Santos, María Susana
AU  - Mateos López, Javier
AU  - González Sánchez, Tomás
PY  - 2025
SN  - 1569-8025
UR  - http://hdl.handle.net/10366/169272
AB  - [EN]The breakdown of GaN-based Schottky barrier diodes associated with impact-ionization events initiated by electrons injected by tunneling is physically analyzed by means of a Monte Carlo simulator self-consistently coupled with a two-dimensional...
LA  - eng
PB  - Springer
KW  - Schottky barrier diode
KW  - Impact ionization
KW  - Tunnel current
KW  - Breakdown
TI  - Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs
DO  - 10.1007/s10825-025-02430-2
T2  - Journal of Computational Electronics
VL  - 24
M2  - 189-1
ER  -