TY  - JOUR 
AU  - García Sánchez, Sergio
AU  - Íñiguez-de-la-Torre, Ignacio
AU  - Paz-Martínez, Gaudencio
AU  - Artillan, Philippe
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
PY  - 2026
UR  - http://hdl.handle.net/10366/170603
AB  - [EN]We investigate the frequency-dependent nonlinearities of an AlGaN/GaN high electron mobility transistor (HEMT) involved in terahertz (THz) detection by means of 2-D Monte Carlo (MC) simulations. The analysis shows that, below 1 THz, the...
LA  - eng
PB  - IEEE
KW  - Logic gates
KW  - Terahertz radiation
KW  - Radio frequency
KW  - MODFETs
KW  - HEMTs
KW  - Field effect transistors
KW  - Monte Carlo (MC) simulations
KW  - Zero-bias detector
TI  - Physical Insight Into Frequency-Dependent Nonlinearities in AlGaN/GaN HEMTs
DO  - 10.1109/TED.2026.3662300
T2  - IEEE Transactions on Electron Devices
ER  -