TY  - JOUR 
AU  - Paz-Martinez, Gaudencio
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - Sánchez Martín, Héctor
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
PY  - 2023
SN  - 0018-9480
UR  - http://hdl.handle.net/10366/155349
AB  - [EN]This paper presents an analysis of detection in the microwave region with AlGaN/GaN high-electron mobility transistors in terms of the key figures of merit: responsivity (both with voltage- and current-mode detection schemes) and noise equivalent...
LA  - eng
KW  - HEMTs
KW  - Zero-bias detectors
KW  - Transistors
KW  - MODFETs
KW  - Gallium Nitride
KW  - 
KW  - Microwaves
KW  - Semiconductors
KW  - Transistors, Electronic
TI  - Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range.
DO  - 10.1109/TMTT.2023.3238794
T2  - IEEE Transactions on Microwave Theory and Techniques
VL  - 71
M2  - 3126
ER  -