TY  - JOUR 
AU  - Sangaré, Paul
AU  - Ducournau, Guillaume
AU  - Grimbert, Bertrand
AU  - Virginie, Brandli
AU  - Faucher, Marc
AU  - Gaquiere, Christophe
AU  - Íñiguez de la Torre, Ana
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - Millithaler, Jean Francois
AU  - Mateos López, Javier
AU  - González Sánchez, Tomás
PY  - 2013
UR  - http://hdl.handle.net/10366/122100
AB  - The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called Self Switching Diodes) have been fabricated for the first time in this material system using both recess-etching and ion...
LA  - eng
KW  - Nanodevices
KW  - Terahertz
KW  - GaN
TI  - Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
ER  -