TY  - JOUR 
AU  - Westlund, Andreas
AU  - Sangaré, Paul
AU  - Ducournau, Guillaume
AU  - Nilsson, Per-Ake
AU  - Gaquiere, Christophe
AU  - Desplanque, Ludovic
AU  - Wallart, Xavier
AU  - Grahn, Jan
PY  - 2013
UR  - http://hdl.handle.net/10366/122191
AB  - RF characterization of InAs self-switching diodes (SSDs) is reported. On-wafer measurements revealed no roll-off in responsivity in the range 2-315 GHz. At 50 GHz, a responsivity of 17 V/W and a noise-equivalent power (NEP) of 150 pW/sqrt(Hz) was...
LA  - eng
KW  - Nanodevices
KW  - Terahertz
KW  - InAs
TI  - Terahertz Detection in Zero-Bias  InAs Self-Switching Diodes at Room Temperature
ER  -