TY  - JOUR 
AU  - Moro-Melgar, Diego
AU  - Mateos López, Javier
AU  - González Sánchez, Tomás
AU  - García Vasallo, Beatriz
PY  - 2014
UR  - http://hdl.handle.net/10366/130633
AB  - By using a Monte Carlo simulator, the influence of the tunnel injection through the Schottky
contact at the gate electrode of a GaInAs/AlInAs High Electron Mobility Transistor (HEMT) has
been studied in terms of the static and noise performance. The...
LA  - eng
PB  - American Institute of Physics
KW  - Tunnel injection
KW  - HEMT
KW  - Schottky gate
KW  - Noise
TI  - Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs high electron mobility transitor
DO  - http://dx.doi.org/10.1063/1.4903971
ER  -