TY  - JOUR 
AU  - Talbo, Vincent
AU  - Mateos López, Javier
AU  - González Sánchez, Tomás
AU  - Lechaux, Yoann
AU  - Wichmann, Nicolas
AU  - Bollaert, Sylvain
AU  - García Vasallo, Beatriz
PY  - 2015
UR  - http://hdl.handle.net/10366/130651
AB  - Impact-ionization metal-oxide-semiconductor FETs (I-MOSFETs) are in competition with tunnel FETs (TFETs) in order to achieve the best behaviour for low power logic circuits. Concretely, III-V I-MOSFETs are being explored as promising devices due to...
LA  - eng
PB  - Institute of Physics Publishing
KW  - Monte Carlo method
KW  - Tunnel FET
KW  - IMOS
TI  - Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs
DO  - 10.1088/1742-6596/647/1/012056
ER  -