TY  - JOUR 
AU  - Sánchez Martín, Héctor
AU  - García Pérez, Óscar Alberto
AU  - Íñiguez-de-la-Torre, Ignacio
AU  - Pérez Santos, María Susana
AU  - Mateos López, Javier
AU  - González Sánchez, Tomás
AU  - Gaquiere, Christophe
PY  - 2017
UR  - http://hdl.handle.net/10366/133422
AB  - [EN]Pulsed and transient measurements performed in planar nanodiodes fabricated on an AlGaN/GaN heterolayer reveal the influence of surface and bulk traps on the I-V characteristic and AC impedance. Rectangular and V-shape diodes of different lengths...
LA  - eng
PB  - IEEE
KW  - Traps
KW  - GaN nanodiodes
KW  - Pulse and transient measurements
TI  - Geometry and bias dependence of trapping effects in planar GaN nanodiodes
DO  - 10.1109/CDE.2017.7905246
ER  -