TY  - JOUR 
AU  - Sánchez Martín, Héctor
AU  - Sánchez Martín, Sergio
AU  - Íñiguez-de-la-Torre, Ignacio
AU  - Pérez Santos, María Susana
AU  - Novoa López, José Antonio
AU  - Ducournau, Guillaume
AU  - Grimbert, Bertrand
AU  - Gaquiere, Christophe
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
PY  - 2018
SN  - 0268-1242
UR  - http://hdl.handle.net/10366/138156
AB  - [EN]GaN based self-switching diodes (SSDs) have been fabricated for the first time on SiC substrate. They have been characterized as RF power detectors in a wide frequency range up to 220 GHz, showing a cutoff frequency of about 200 GHz. At...
LA  - eng
PB  - Institute of Physics (Bristol, Gran Bretaña)
KW  - GaN diodes
KW  - Terahertz detectors
TI  - GaN nanodiode arrays with improved design for zero-bias sub-THz detection
DO  - 10.1088/1361-6641/aad766
ER  -