TY  - JOUR 
AU  - Pérez Martín, Elsa
AU  - González Sánchez, Tomás
AU  - Vaquero Monte, Daniel
AU  - Sánchez Martín, Héctor
AU  - Gaquiere, Christophe
AU  - Raposo Funcia, Víctor Javier
AU  - Mateos López, Javier
AU  - Íñiguez de la Torre Mulas, Ignacio
PY  - 2020
SN  - 0957-4484
UR  - http://hdl.handle.net/10366/144049
AB  - [EN]The zero-bias microwave detection capability of self-switching diodes (SSDs) based on AlGaN/GaN is analyzed in a wide temperature range, from 10 K to 300 K. The measured responsivity shows an anomalous enhancement at low temperature, while the...
LA  - eng
KW  - Self-switching diode
KW  - GaN
KW  - Trapping effects
KW  - Impedance measurements
KW  - Microwave detection
TI  - Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes
DO  - 10.1088/1361-6528/ab9d44
T2  - Nanotechnology
VL  - 31
M2  - 405204
ER  -