TY  - JOUR 
AU  - Pérez Martín, Elsa
AU  - Íñiguez de la Torre Mulas, Ignacio
AU  - Gaquiere, Christophe
AU  - González Sánchez, Tomás
AU  - Mateos López, Javier
PY  - 2021
SN  - 0021-8979
UR  - http://hdl.handle.net/10366/147185
AB  - [EN]In this paper, the occupancy of sidewall surface states having a clear signature in the performance of AlGaN/GaN-based self-switching diodes (SSDs) is analyzed using a semi-classical Monte Carlo (MC) simulator in a wide temperature (T) range, from...
LA  - eng
PB  - American Institute of Physics (Nueva York, Estados Unidos)
KW  - Self-switching diodes
KW  - GaN
KW  - Trapping effects
KW  - Surface charge
KW  - Monte Carlo simulation
TI  - Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence
DO  - 10.1063/5.0061905
T2  - Journal of Applied Physics
VL  - 130
M2  - 104501
ER  -